Abstract
Structural and electrical properties of Ge films deposited under simultaneous argon ion irradiation were investigated by changing both the ion-to-atom arrival-rate ratio and the ion energy. The apparent optical bandgap energy of the films showed a minimum value at an ion-to-atom ratio of about 5 × 10 −3 and an optimum ion energy of 100 eV, approaching the crystalline value of 0.67 eV. According to Hall measurements, the films exhibited an n-type conduction and an electron mobility at a maximum value of about 700 cm 2/Vs for the same ion-irradiation conditions. These facts strongly suggest that both the growth of crystalline grains in the films and the crystallinity within the grains were appreciably improved under optimum irradiation conditions of the ion beam during the film deposition.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
