Abstract
In recent years, advances in optoelectronics and electronics have prioritized optimizing semiconductor device performance and reducing power consumption by modeling new semiconductor device geometries. One such innovative structure is the radial p-n junction structure. In this work, we present a concept that submicron three-dimensional simulations were conducted on radial p-n junction structures based on GaAs material to investigate the influence of temperature ranging from 250K to 500K with a step of 50K on the electrophysical distribution, such as space charge, electro-potential, and electric field, in radial p-n junction structures, as well as various forward voltages. In particular, we focus on the shell radius within the structure: 0.5 μm and 1 μm for the shell. The modeling results were compared with the results obtained from solving the theoretical Poisson equation in the cylindrical coordinate system.
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