Optimization of the electron‐beam‐lithography parameters for the moth‐eye effects of an antireflection matrix structure

Abstract

AbstractIn this study, we mainly used the characteristics of electron‐beam lithography in measurement control and direct‐write technology to improve the physical restrictions and production processes of optical lithography and other nanopattern production methods. We did this by using a silicon wafer as a substrate, coating a negative‐tone photoresist, and using scattering and the reflection produced by the collision of an electron beam with the wafer lattice and the proximity effect of a secondary electron inside the electron‐beam photoresist to produce an antireflection matrix structure with a moth‐eye effect. In addition, we used the Taguchi quality method with an orthogonal array to plan the experiment and the signal‐to‐noise ratio to analyze the experimental data, and in the experimental process, we produced a full factorial equivalent experiment, using very few experiment repetitions and deriving optimum conditions. Also, we used back‐propagation neural networks to fine‐tune significant factors, allowing the production of the deepest process control parameters and thereby imparting to the antireflection matrix structure the best effect. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 102: 5303–5313, 2006