Abstract
A new structure of Si-based 2-terminal tandem solar cells was numerically analyzed. The structure was optimized to obtain high efficiency considering realistic material parameters. Gallium arsenide phosphide (GaAs_1-xP_x) and indium gallium phosphide (In_1-xGa_xP) were proposed as top cell materials. The conversion efficiency of the cell was calculated by simulating its voltage–current performances under the operating conditions. An efficiency of 33.1% can be expected for a GaAs_0.73P_0.27/Si cell and 34.4% for an In_0.57Ga_0.43P/Si cell. In_1-xGa_xP was shown to be more promising as a top cell material because it has a larger absorption coefficient than aAs_1-xP_x.
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