Abstract
In view of applications of SiO x N y thin films in MOEMS technology, a study of the optomechanical characteristics of the PECVD deposited material are investigated. To optimize the quality of SiO x N y layers we establish the relationship between the chemical properties, optical performances, micromechanical stress, and growth parameters of deposited films. To use the SiO x N y thin film for the core layer of a strip-loaded waveguide, we propose preparation conditions of SiO x N y that offer a low-loss optical waveguide with well-controlled refractive index, based on a low-internal stress multilayer structure.
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