Abstract
This paper will investigation the optimization of ITO thin films by various thin films deposited time with annealing under air and nitrogen environment. ITO will use for transparent electrode of photodetector that require high transparent and low resistivity. Thin films prepare by using RF sputtering technique by various sputter times 5, 15, 30 and 60 mins then annealing under air and nitrogen for 10 mins, 300 °C. Transparent of thin films after prepared at thickness around 1,166 µm and annealing under nitrogen environment show high transparent 89.8% at wavelength 1,170 nm and low resistivity 2.1 × 10−5 ohm-cm. From the results of transparent and resistivity will get optimize thickness of thin films that use for transparent electrode of photodetector. By optimize thickness of ITO thin films is 413 nm with 87.6% transparent and 0.8 × 10−3 ohm-cm resistivity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
