Abstract
To improve crystal microdefect control in silicon single crystal growth, this paper proposes a new method, which can not only obtain optimal process parameter track via numerical simulation analysis and optimization, but also realize simultaneous control of the crystal diameter and micro-defect. Meanwhile, CGSim software numerical is used to simulate influence of crystal height and pulling rate changes on the shape of solid liquid interface and the V/G value during the growth process of φ300mm silicon single crystal in the cusp magnetic field. Then, numerical simulation data analysis is employed to obtain the V/G value of solid liquid interface at the isometric stage as well as the optimal pulling rate track and heater power track in accordance with requirements of crystal growth. This can provide reference for high-quality silicon single crystal growth control.
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