Abstract
Thermo-galvanomagnetic measurements have been performed on single crystals of cadmium arsenide prepared by vapour growth techniques. It has been found that the electrical properties of this semiconductor are not noticeably anisotropic. Furthermore, thermal diffusivity measurements at liquid nitrogen temperature and room temperature show that the thermal conductivity is also isotropic within the limits of experimental error. Thus there is no preferred orientation for cadmium arsenide in thermal detectors based on the Nernst effect. It is possible that the relevant figure of merit has its highest value at an electron concentration of about 3×1023 m−3, the lowest concentration that has been achieved up to the present time.
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