Abstract
ZnTe is considered to be one of innovative semi-conducting materials because the theoretical energy band gap value is 2.26 eV suitable for solar cell or LED. And the further advantageous point is that the material of ZnTe is inexpensive and harmless. Among various synthesizing techniques, electro-deposition process has been investigated because the process is not expensive and suitable for mass production. In this study, optimum condition for producing the relatively thick film with strong magnetic field. The band gap value of thin ZnTe can be improved up to 2V in optimum conditions of electro-deposition and successive heat treatment. Furthermore, in order to achieve high performance of energy exchange, crystal orientation of ZnTe with cubic structure can be realized by electro-deposition of metal Te layer under strong magnetic field prior to ZnTe deposition.
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