Abstract
A new range of high voltage Insulated Gate Bi-polar Transistors (IGBTs) is presented which have been optimised for pulsed power applications. The devices, rated for blocking voltages up to 5.2 kV, are based on punch through (PT) technology and have been optimised to maximise forward transconductance. This optimisation allows the device to operate at very high levels of pulsed collector current when compared to conventional IGBT technology. The design, construction and performance of a fully integrated five terminal switch assembly based on the abovementioned device is then discussed.
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