Abstract
The design optimisation, through device simulation and fabrication, of the 0.25 /spl mu/m retrograde well surface-channel pMOSFET for low-power applications is presented. The high performance pMOSFET is realised by careful design of both the channel and the LDD doping profile. A high transconductance of 190 mS/mm and an off-current of <1pA//spl mu/m is demonstrated.
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