Abstract
Abstract This paper presents a new approach based on a novel optimization algorithm (Equilibrium optimizer) to determine the critical characteristic parameters of the Au/GaN/GaAs Schottky barrier diodes, such as ideality factor, series resistance and barrier height. In order to simplify the nonlinear equation of the thermionic emission model; we used the Lambert W function. The evaluation of the Equilibrium optimizer algorithm performance was done, by comparing their results to that of analytical methods of Kaminski and Cheung and Cheung technique. The proposed approach (EO) has shown remarkable estimation performance in terms of the accuracy and reliability. The main Schottky diode electrical parameters, which were extracted using the EO, are the barrier height φ b n = 0.62 eV, the serial resistance RS = 16.21 Ω and the mean ideality factor n = 1.88.
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