Abstract
Two low cost infrared sources emitting above 4 μm wavelength are described: (i) An epitaxial EuSe/PbSe/Pb 1− x Eu x Se active resonant cavity with integrated top and bottom mirror on a Si(1 1 1) substrate transforms the incoming 0.9 μm pump radiation to e.g. 4.2 μm wavelength. The device operates at room temperature, and the width and value of the emission wavelength can be tuned by design. (ii) Double heterostructure or quantum well EuSe/PbSe/Pb 1− x Eu x Se edge emitting lasers on silicon substrates pumped with 0.9 μm wavelength light exhibit output power in the mW range. If the active layers are grown with a tapered thickness, the laser emission may be continuously tuned over a wavelength range of up to several micrometers by mechanically displacing the structure with respect to the pump beam.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
