Abstract
We present a concept for optically controlled current confinement in vertical-cavity surface-emitting lasers (VCSELs) based on the monolithic integration of a phototransistor. Omitting the usual oxide aperture improves the manufacturability and prevents built-in strain near the active zone. Measured continuous-wave operation characteristics of fabricated devices show hysteresis loops in the current–voltage and light–current curves or a negative differential resistance region. Moreover, the optoelectronic influence of the integrated phototransistor is compared with a regular VCSEL. Requirements for the switch-on point of the laser are defined and explained.
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