Abstract
A theoretical investigation of the lower optical transitions in a (4 × 4) SiGe strained superlattice has been carried out. The use of a pseudopotential complex bandstructure matching technique has allowed an accurate representation of the bulk bandgaps and effective masses. Furthermore, the effects of strain in the germanium layers can be introduced by appropropriate adjustment of the pseudopotential formfactors. The energy bands obtained are in good agreement with those calculated by a selfconsistent LDA calculation but with the correct bandgaps. Charge density plots are shown for conduction and valence band states. Finally, momentum matrix elements are calculated for the main transitions.
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