Abstract
We have investigated the multisubband recombination of V-shaped InGaAs/GaAs quantum wires as a function of the excitation density under stationary and transient conditions. The experimental results compare well with theoretical calculations of the quantized states, taking into account the effect of the nontetragonal strain and of the internal piezoelectric field. The changes of the optical properties of the quantum wires induced by external magnetic and electric fields are measured to elucidate the basic mechanisms of recombination.
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