Abstract

Simultaneous effects of electric field and magnetic field on exciton binding energy as a function of dot radius in a cylindrical GaAs0.9P0.1/GaAs0.6P0.4 strained quantum dot are investigated. The strain contribution includes the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical calculations are performed using variational procedure within the single band effective mass approximation. Optical rectification in the GaAs0.9P0.1/GaAs0.6P0.4 quantum dot is computed in the presence of electric and magnetic fields.

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