Abstract
The optical properties of Si1−xGex quantum dots (QDs) grown directly onto Si (001) substrates without a buffer layer using the reduced pressure chemical vapor deposition (RPCVD) system have been investigated. From the results of the EDX and XRD analyses of the Si1−xGex QD structures, the Ge composition in the Si1−xGex QDs was determined to be approximately 30% and 40%, for the respective analyses, and the values of the residual strain ɛ of the Si0.7Ge0.3 and Si0.7Ge0.4 samples were calculated as −0.0095 and −0.0089, respectively. Five peaks were observed in the Raman spectra, which correspond to the vibration of Si-Si, Si-Ge, and Ge-Ge phonons, and the Si1−xGex QD related peaks were located at 486 cm−1 and 490 cm−1. The transition peaks related to the QD region observed in the photocurrent spectrum were preliminarily assigned to the electron-heavy hole (e-hh) and electron-light hole (e-lh) transitions. The no-phonon (NP) peak of Si1−xGex QDs was clearly observed in PL spectrum.
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