Abstract
We have investigated the photoluminescence (PL) and growth properties of self-assembled InAs/GaAs quantum dots (QD) grown on (211)A-oriented GaAs substrate in a low coverage region. At the onset of the QD formation in the Stranski–Krastanov mode, structures of QD on (211)A substrate were quite different from those on (100) substrate. The uniformity of size distribution was better and the density was higher than that grown on (100) substrate. We found a PL peak at 1.32 eV when the InAs coverage was 1.57 ML. Another PL peak gradually appeared at 1.37–1.42 eV with increasing InAs coverage. The peaks at 1.32 and 1.37–1.42 eV were attributed to the emission from a defect-related QD and a typical QD, respectively. When the InAs coverage exceeded 1.89 ML, the QD density decreased with increasing InAs coverage, due to the coalescence of QD. The samples studied here showed PL spectra having a larger intensity and narrower full width at half-maximum compared with that grown on (100) substrate.
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