Abstract
Effects of a ZnSe buffer layer on the optical properties in ZnTe on GaAs grown by molecular beam epitaxy (MBE) are investigated by photoluminescence (PL) and Raman scattering. From PL results an improvement of crystallinity of ZnTe films is recognized as the thickness of the ZnSe buffer layer increases. This is explained well by an exponential increase of the ratio of neutral acceptor-exciton complex to deep level emission with increasing ZnSe buffer layer thickness. Raman scattering results show an elongation of the ZnSe lattice by expansion due to accomodation of the ZnTe lattice. The large critical thickness of ZnTe/ZnSe is estimated experimentally to be about 30 nm in MBE growth on GaAs because of similar electronegativity in growth of ZnTe on ZnSe. The result obtained from the temperature dependence of LO phonon frequencies supports also an expansion of the ZnSe lattice obtained by Raman scattering.
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