Abstract
The optical constants and thickness of cadmium chalcogenides (CdX, X= S, Se and Te) thin films prepared by quasi close-space sublimation and high-frequency magnetron sputtering method are determined. The optical constants and the band gap of the films under study have been determined. Optical properties (refractive index n(λ), extinction coefficient k(λ) and dielectric functions ε(λ)) of thin films and thickness d can be determined from the transmission spectrum. The dispersion of the refractive index was explained using a single oscillator model. Single oscillator energy and dispersion energy are obtained from fitting. The material optical parameter such as normalized integrated transmission, zero and high-frequency dielectric constant, density of state effective mass ratio was also calculated.
Highlights
Thin films of cadmium chalcogenides (CdX, X= S, Se and Te) representative of AIIBVI crystal group and shows semiconductor behavior
The transmission coefficient strongly depends on the film structure, which is determined by the preparation methods, film thickness and deposition conditions
The transmission spectra of the thin films exhibit periodic peaks and minimums associated with interference effects, indicating the high structural perfection of thin films
Summary
Thin films of cadmium chalcogenides (CdX, X= S, Se and Te) representative of AIIBVI crystal group and shows semiconductor behavior. They are an important research field because of their wide application in various fields of optoelectronic devices. For the formation of high-efficiency heterojunctions based on p-CdTe for a window layer of a solar battery, cadmium sulfide (CdS) is mainly used [2,3,4]. CdS is characterized by a high photoconductivity in the visible region. This is due to the fact that CdS is a direct-band gap semiconductor and, is characterized by direct band–band optical transitions. The electrical properties of CdS are characterized by a resistivity value of about 106 Om·cm and the n-type conductivity
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