Abstract
AbstractThe experimentally observed growth of the integrated intensity of the n = 1 exciton absorption band in GaSe crystals is due to its energy degeneracy with the indirect conduction band. Participation of a phonon in such a process is needed to meet the conservation laws. Introduction of a light impurity atom into the interlayer space gives rise to a local interlayer mode capable of controlling the exciton‐phonon processes.
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