Abstract
In the first part of this paper we discuss the optimization of the growth conditions of molecular beam epitaxy GaSb layers. Then we present preliminary results for GaSbAlSb multiple quantum wells which have one excitonic absorption line peaking at about 1.5 μm at room temperature. Finally we present a 10 pair Bragg reflector which shows 97% reflectivity. These preliminary results allow the GaSbAlSb system to be considered for optoelectronic devices.
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