Abstract
The IR absorption spectra of hydrogenated amorphous films of an a-Si0.60Ge0.40:H solid solution that were obtained by plasmachemical deposition at different partial pressures of hydrogen \(P_{H_2 }\) have been investigated. The oscillator strengths Γ that depend substantially on \(P_{H_2 }\) have been determined. It is shown that hydrogen is contained in the films mainly in the GeH and SiH forms. Using integral absorptions Iw, the concentrations of hydrogen were determined. The highest value of \(P_{H_2 }\) is observed at Γ = 0.51, P = 4.16, NH = 9.7·1021 cm−3, and CH = 23.7 at.%. It has been established that the oscillator strengths depend on the hydrogen concentration: they decrease on hydrogen effusion and increase with the hydrogen concentration. It is shown that the hydrogen concentration in the films of the a-Si0.60Ge0.40:H solid solution can be controlled by changing its pressure.
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