Abstract
Swift heavy ions are used to study the effects of electronic energy loss on Cu cluster formation in fused silica after post-irradiation annealing. Fused silica substrates covered with 10nm thin Cu-films were irradiated using beams of either 120MeV Ag9+ ions or 350MeV Au26+ ions at fluences ranging from 2×1013 to 1×1014cm−2. After irradiation, the samples were annealed for 30min in argon, at temperatures of 773–1200K and characterized by UV–VIS absorption spectroscopy. The swift ion irradiations created E′ and B2 defects in silica, which were partially eliminated during annealing. In addition, Cu cluster formation in silica was observed after annealing. Irradiation fluences exceeding 4×1013cm−2 and annealing temperatures above 1100K are more effective in forming larger nanoclusters.
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