Abstract
We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. Lasing modes of a single microcavity were examined from 20 to 300 K and gain mechanisms were compared to those of a thick GaN epilayer. We have also systematically studied InGaN/(In)GaN multiple quantum wells as a function of well and barrier thickness. We demonstrate that the stimulated emission threshold and photoluminescence (PL) decay time are strongly dependent on the well and barrier thickness. The experimental results indicate that the enhanced optical quality of samples with larger barrier thicknesses can he readily applied to the fabrication of InGaN/(In)GaN laser diodes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
