Optical properties and electronic structure of thin (Ga,In)As-AlAs multiple quantum wells and superlattices under internal and external strain fields.

Abstract

We report on studies of the optical properties of a series of (Ga,In)As-AlAs thin strained-layer multiple quantum wells and superlattices submitted to high uniaxial stress perpendicular to the growth axis of the structures. Samples having both type-I and type-II configurations for their conduction-band to valence-band potential profiles have been studied. Explanation of the experimental data has been made in the context of an envelope-function approach, which explicitly takes into account the mixing of the upper valence-band states with the split-off valence-band states. The inclusion of spin-dependent deformation potentials is necessary to interpret the values of the zero-stress energies as well as to explain their behavior as a function of the external stress.