Abstract
In this paper, we discuss the optical characteristics and polarization anisotropy of a tensile strained polar c-plane InGaN/AlInN quantum well. We found that if the quantum well is under the tensile strain, the |Z⟩-like state will be lifted up so that the emitted light will be TM mode. In addition, with a particular aluminum composition of the AlInN alloy as the barrier for the tensile strained InGaN quantum well, it is possible to reduce quantum-confined Stark effect. The self-consistent Poisson and 6×6 k⋅p Schrödinger solver has been used for studying light emitting characteristics. Our results show that the tensile strained InGaN quantum well on AlInN barrier has much larger optical gain and lower threshold carrier density compared to the conventional InGaN/GaN system, and it has a potential to be TM light source for edge emitting laser diodes with the photonic crystal cavity made by nanorod arrays.
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