Abstract
The knowledge of the consequences of charged particles interaction with semiconductor materials is of paramount interest to study the performance of devices for space applications. Particularly, GaAs is one of the most used for device development. Here, we present a novel method to measure the projected range of energetic protons impinging crystalline GaAs based on µRaman spectroscopy. To validate the method, different proton energies were obtained using appropriate Al foils, an approach which has been properly justified. Finally, the spatial variation of different parameters obtained from Raman spectra is compared with SRIM (Stopping and Range of Ions in Matter) simulations, showing a remarkable agreement of the theoretical and experimental ranges.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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