Abstract
Optical memory planes are proposed in which writing and nondestructive reading would be performed optically using a laser-induced inhomogeneity of refractive indices which has been observed in poled single crystals of LiNbO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and LiTaO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> . Writing times of the order of 0.5 millisecond using a 0.4-watt Ar laser with a bit density in excess of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> per square inch appear feasible.
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