Abstract
We investigated the optical emission at 2 K from InP quantum dots (QDs) grown on GaAs with and without a GaAs capping layer. Uncapped QDs present relatively long emission decay times (4–14 ns). In contrast, dots covered with a GaAs layer present much shorter lifetimes (∼1 ns). We analyse those results considering the effects of surface states (non-radiative recombination channel) and intermixing at the interfaces (affecting the electron–hole wave-function overlap). The continuous-wave optical emission spectrum from uncapped dots does not reproduce straightforwardly the dot size distributions obtained by atomic force microscopy measurements, showing an enhancement of the emission from small dots. The result is attributed to the strong dependence of the electron–hole wave-function overlap with the dot size obtained by our calculations.
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