Abstract
ABSTRACTIn this study, 6-150mm p-type <100> wafers were cleaned, laser-scribed, and pre-process measured for stress. The wafers were then processed in a tungsten-halogen lamp RTP system with a target Rapid Thermal Oxidation (RTO) thickness of 100Å. Three categories of whole-wafer measurement techniques were used to characterize these wafers: optical, electrical, and mechanical. Optical inspection techniques included spectroscopic reflectometry (reflectivity), and a combination of beam profile reflectometry and beam profile ellipsometry (thickness). Electrical techniques included C-V plotting with a mercury probe (oxide thickness from Cmax, breakdown voltage, and interface trap density) as well as laser-induced photo-current scanning (minority carrier lifetime, minority-carrier diffusion-length). Mechanical inspection included wafer warpage and stress measurements as well as optical imaging inspection using the magic mirror method (damage and defects). Wafer measurements from these instruments (i.e., contour and 3-d maps) are used to characterize integrity of the RTO process.
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