Abstract
Nanocrystalline TiO 2 films have been synthesized on glass and silicon substrates by sol–gel technique. The films have been characterized with optical reflectance/transmittance in the wavelength range 300–1000 nm and the optical constants ( n, k) were estimated by using envelope technique as well as spectroscopic ellipsometry. Morphological studies have been carried out using atomic force microscope (AFM). Metal-Oxide-Silicon (MOS) capacitor was fabricated using conducting coating on TiO 2 film deposited on silicon. The C– V measurements show that the film annealed at 300 °C has a dielectric constant of 19.80. The high percentage of transmittance, low surface roughness and high dielectric constant suggests that it can be used as an efficient anti-reflection coating on silicon and other optical coating applications and also as a MOS capacitor.
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