Abstract
CH3NH3PbI3 thin film was deposited by a dual-source evaporation system under high vacuum (∼10−4 Pa). The crystallographic phase was analyzed by X-ray diffraction and confirmed as the perovskite structure. The optical properties of the thin film have been investigated in the spectral range 300-1800 nm. The analysis of the absorption coefficient () reveals direct allowed transition with corresponding energy 1.58 eV. The surface morphology of the film was characterized by atomic force microscopy (AFM). The observed features exhibited by CH3NH3PbI3 give a vital chance to explore its application for various optoelectronic devices. To see its other potential utility, Al/CH3NH3PbI3 /ITO Schottky diodes were fabricated. Based on the analyzing the I-V measurement for the Al/CH3NH3PbI3/ ITO device, the basic device parameters such as barrier height and ideality factor were determined. At the low-voltage region, the current conduction in the device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions.
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