Abstract
A method to control the optical polarization of non-c-plane InGaN quantum wells (QWs) is proposed. Firstly, it is described the numerical and analytical solutions of the valence band eigenenergies and eigenfunctions for non-c-plane nitride semiconductors. It is found that anisotropic strain dominates optical anisotropy due to the small spin–orbit interaction and the large lattice mismatch. Subsequently, it is introduced the InGaN/AlGaN QW structure instead of the InGaN/GaN QW in order to manipulate the eigenenergies of the two topmost valence bands. This resulted in optical polarization switching. We conclude with a discussion of relevant computational results.
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