Abstract
(Ba1-xGdx)SnO3 (BGSO) (x = 0–0.15) films were epitaxially grown on MgO substrates by pulsed laser deposition. Structure analysis was performed using X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. Transport properties were investigated by Hall effect and temperature dependent resistivity measurement. Results show that the film resistivity decreases systematically with increasing Gd doping concentration. The lowest room-temperature resistivity of 6.18 mΩcm was observed in film at x = 0.07, with the metal-insulator transition at 30 K, which was attributed to the formation of a degenerate band in films. Optical transmission spectra measurement shows that all the BGSO films have high transmittance of more than 80% in the visible range. The band gap variation with the Gd doping concentration was interpreted by the Burstein-Moss effect. Excellent optical and electrical properties suggest that BGSO films have potential applications in the optoelectronic devices as transparent and conducting oxide material.
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