Abstract
We present in this work preliminary studies concerning the optical characterization, by optical absorption, photoluminescence and Raman spectroscopies, of Si-enriched films into a SiO2 matrix as a function of the Si concentration. The Si-molar concentration dependence shows different characteristics for each one of the samples: low Si concentration samples (lower than 50 mol% of silicon) showed, at room temperature, a low energy PL band around 1.6 eV, whereas samples with higher concentration (>50 mol% of silicon) showed a PL band at 2.27 eV. Raman spectra of the samples account for different characteristics: low Si concentration samples showed a contribution of the amorphous phase of SiO2, whereas for high Si concentration samples, a relaxation of the selection rules is observed. Discussion and analysis of the experimental results are presented.
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