Abstract
The structural and optical properties of individual ultra-long GaAs nanowires (NWs) were studied after different nitrogen passivation process conditions. The surface morphology of the NWs after passivation was characterized by high resolution transmission electron microscopy (HRTEM) and high angle annular dark field (HAADF) imaging. Electron energy loss spectroscopy (EELS) confirmed the presence of nitrogen on the NW surface. Micro-photoluminescence (μ-PL) on single NWs indicated an increase of the luminescence intensity upon passivation. This work reveals the efficacy of a plasma passivation process on complex nanometer-scale morphologies.
Highlights
III-V semiconductor NWs have received much interest for their potential applications in various optoelectronic devices, including possible integration with silicon electronics [1][2][3][4]
We report here an easy ex situ passivation process based on a nitrogen plasma
Structural characterization was performed on the passivated NWs with Scanning transmission electron microscopy (STEM)-high angle annular dark field (HAADF) (Fig. 2 (a), (c), (e)) and high resolution transmission electron microscopy (HRTEM) (Fig. 1(b),(d),(f))
Summary
III-V semiconductor NWs have received much interest for their potential applications in various optoelectronic devices, including possible integration with silicon electronics [1][2][3][4]. Most III-V NWs are grown by the vapor-liquidsolid (VLS) method, which can be promoted either by a foreign metal catalyst, often gold, [5][6][7][8] or a group III metal constituting the NW itself (Ga in the case of GaAs NWs) in the self-catalyzed approach [9][10][11]. Surface effects such as carrier depletion and surface recombination are bottlenecks for the practical application of such high aspect ratio nano-objects. Many procedures that provide GaAs surface passivation have been studied
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