Abstract
Cu doped ZnCoAlO (ZCAO) films deposited on single-crystal Si (100) substrates were prepared by pulsed laser deposition (PLD). The microstructures of the ZCAO films with different Cu concentrations were studied by X-ray diffraction (XRD); the findings show that the quality of the crystal structure increases with Cu ion doping. The near-band gap and deep-level-defect emissions at room temperature (RT) are observed in the Cu-doped samples via photoluminescence (PL) measurement, revealing its effects on the short-wavelength emission for the Cu-doped film compared with the ZCAO film. The magnetism and electron transport in the Cu doped ZCAO films were also investigated. The results show that interstitial Cu ions affect the carrier concentration. The magnetic measurement shows that the Cu ions occupying adjacent cation positions breaks the magnetic double exchange interaction and weakens the magnetism of the samples.
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