Optical and laser properties of epitaxially grown passively Q-switched Cr/sup 4+/:GGG/ Nd/sup 3+/:GGG, Cr/sup 4+/:YAG/ Yb/sup 3+/:YAG and Cr/sup 4+/:YAG/ Nd/sup 3+/ :YAG microchip lasers

K Kopczynski,I.M Syvorotka,J Skwarcz,J Sarnecki,Z Mierczyk,A Matkowski,J Mlynczak,S Melnyk,S.B Ubizski,M Kwasny

doi:10.1109/eqec.2003.1314310

Optical and laser properties of epitaxially grown passively Q-switched Cr/sup 4+/:GGG/ Nd/sup 3+/:GGG, Cr/sup 4+/:YAG/ Yb/sup 3+/:YAG and Cr/sup 4+/:YAG/ Nd/sup 3+/ :YAG microchip lasers

K Kopczynski, I.M Syvorotka + Show 8 more

https://doi.org/10.1109/eqec.2003.1314310

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Publication Date: Jun 22, 2003

Citations: 1

#Saturable Absorber For Passive Q-switching #Passive Q-switching Of Nd + Show 8 more

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Abstract

Liquid phase epitaxy technique is used to grow Cr/sup 4+/ doped GGG and YAG monocrystalline thin films as a saturable absorber for passive Q-switching of Nd:GGG, Yb:YAG and Nd:YAG microchip lasers. Comparison of laser performance and influence of epitaxial film saturable absorber properties on microchip characteristics (repetition rate, pulse energy and pulse length) are reported.

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