Abstract
In this work, we focus on synthesis, transfer and characterization of doped graphene. Growth of single layer graphene on copper foil was done by low-pressure chemical vapor deposition (CVD) technique. In the thermal CVD process, hydrogen was used as a process gas with methane as the carbon precursor. Graphene films were synthesized on Cu foil, which was later etched away. After the transfer, graphene films were doped with chemical dopant using ferric chloride (FeCl3). Furthermore, graphene samples on silica substrates were characterized by Raman spectroscopy, spectrophotometry, scanning electron microscopy and four-point-probe technique. The doping process yielded ∼ 50% decrease in sheet resistance, and no changes in the transmittance or in the Raman spectra of the graphene sample.
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