Abstract
Lateral p-n junction structures in which a p-type (111)A equilateral triangle region is surrounded by three n-type slopes were formed by molecular beam epitaxial (MBE) growth of a Si-doped GaAs film on GaAs (111)A substrates. Ridge and groove triangles were subjected to measurements. Results of spatially-resolved cathodoluminescence (CL) measurements from a slope and at a corner are mainly presented. By comparing the optical and electrical characteristics of the ridge and groove triangles, it was made clear that the ridge triangle is suitable for carrier confinement in the p-type (111)A triangle region.
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