Abstract
Bulk Al xGa 1−xSb single crystals with various AlSb solid compositions were grown by the travelling heater method (THM) on GaSb substrates. The crystals were grown with a Ga-rich as well as on an Sb-rich solution zone (undoped or doped with Te). We report in this investigation on results obtained by electrical characterization (DLTS, Hall effect) and optical spectroscopy (photoluminescence). Deep centres (DX centre) and shallow centres ( ⌈ and X conduction band derived donors) were investigated.
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