Abstract
In this Rapid Communication we present detailed band-gap profile in a ${\text{CuIn}}_{1\ensuremath{-}x}{\text{Ga}}_{x}{\text{Se}}_{2}$ thin-film solar cell absorber on nanometers scale. Details of the band bending and charge accumulation are resolved in simultaneous measurements of space-resolved photoluminescence spectroscopy and local beam-induced current in open and short circuit configurations. We find strong influence of top interface defects within 700 nm from a top contact and reconstruct a band diagram in the absorber layer. These results provide a different insight into profiles of efficiency relevant parameters in the solar cells.
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