Abstract
The optical activations of SiNWs coating with Er-doped Al 2 O 3 and Er-doped SiO 2 are observed as the energy transfer from carriers in SiNWs to Er ions. 6 times higher PL intensity of SiNWs coating with Er-doped Al 2 O 3 than that of SiNWs coating with Er-doped SiO 2 at about 1.54 μm was observed at room temperature. Al 2 O 3 has an even higher refraction index, so it could couple more efficiently to semiconductor laser materials. In addition, Er ions with high concentration in Al 2 O 3 disperse well, which maybe exclude the concentration quenching. The luminescence peak of SiNWs coating with Er-doped Al 2 O 3 shows a blue shift and its Full Width at Half Maximum (FWHM) is wider than that of SiNWs coating with Er-doped SiO 2 , which is due to the host natures that the crystal mixture of Er 3 Al 5 O 12 and ErAlO 3 created when Er ions are doped into Al 2 O 3 , but the Er-doped SiO 2 is amorphous, which change the local structure around Er 3+ ions.
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