Abstract
AbstractOptical absorption studies of edge‐type dislocations are carried out on n‐ and p‐type, weakly doped InSb. Edge‐type dislocations are selectively introduced by means of uniaxial compression at 220 °C. The presence of dislocation induces two main changes in the optical absorption spectra: i) absorption tails just before the band edge, which are associated with the strong internal piezoelectric fields and ii) reduction of the intraband absorption, which are explained by the presence of trapping levels bound to the dislocations.
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