Abstract
A simple photoluminescent technique for the measurement of optical absorption coefficients of luminescent semiconductors is described. The technique calls for the preparation of a sample in the form of a Schottky barrier capable of standing a few reverse-bias volts. No further requirements on sample preparation are imposed. In particular, the optical quality of the sample surface is not a critical factor to the technique here described. We illustrate the technique by reporting measurements of optical absorption coefficients of GaAs single-crystals in the 1.96–2.60 eV photon energy range.
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