Abstract
Porous silicon (PSi) on Si(111) surface has been fabricated by electrochemical anodization method. Si surface was anodized in HF and ethanol solution. Anodization time was varied at 10, 20 and 30 min with current density were maintained constant at 20 mA/cm2. PSi was formed in the triangle shape, which is spread throughout Si surface. There was a correlation between the absorbance and the porous size. The absorbance of PSi increases as the increasing of the porous size. The optical absorbance of these results reveals that PSi is promising in solar cell application because it has high absorbance.
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