Abstract
ABSTRACTThin dielectric films on the dielectric substrate are widely employed in millimeter and submillimeter wave device applications, so the problem of precise measurement of their properties is important. One of the most accurate technique for measurement of dielectric properties is the open resonator technique.In this work we propose the method for measurements of thin dielectric film properties on the dielectric substrate using the open semispherical resonator. A good agreement (within 1 %) was obtained in refractive index data between results obtained with direct measurements and with proposed method for thin layer of SI GaAs on a sapphire substrate.
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