On-surface synthesis and characterization of nitrogen-doped covalent-organic frameworks on Ag(111) substrate.

Abstract

Atomically precise fabrication of covalent-organic frameworks with well-defined heteroatom-dopant sites and further understanding of their electronic properties at the atomic level remain a challenge. Herein, we demonstrate the bottom-up synthesis of well-organized covalent-organic frameworks doped by nitrogen atoms on an Ag(111) substrate. Using high-resolution scanning tunneling microscopy and non-contact atomic force microscopy, the atomic structures of the intermediate metal-organic frameworks and the final covalent-organic frameworks are clearly identified. Scanning tunneling spectroscopy characterization reveals that the electronic bandgap of the as-formed N-doped covalent-organic framework is 2.45eV, in qualitative agreement with the theoretical calculations. The calculated band structure together with the projected density of states analysis clearly unveils that the incorporation of nitrogen atoms into the covalent-organic framework backbone will remarkably tune the bandgap owing to the fact that the foreign nitrogen atom has one more electron than the carbon atom. Such covalent-organic frameworks may offer an atomic-scale understanding of the local electronic structure of heteroatom-doped covalent-organic frameworks and hold great promise for all relevant wide bandgap semiconductor technologies, for example, electronics, photonics, high-power and high-frequency devices, and solar energy conversion.